Universidad Politécnica de Madrid

Instituto de energía solar

R&D at IES

Nanostructures


At the early stages of the research it was suggested [A. Martí, L. Cuadra, and A. Luque, Conference Record of the 28th IEEE Photovoltaic Specialists Conference, 2000, 940 (2000) http://dx.doi.org/10.1109/PVSC.2000.916039] that the intermediate band solar cell could be implemented with quantum dots. In this case, the IB emerges from the confinement of electrons in the potential well created by the conduction band (or valence band) offset between the host and dot material. This line specifically studies this approach for the intermediate band solar cell and models these systems.  

 

Contact person: Prof. Antonio Martí

Selected papers

  1. A. Luque and A. Mellor, Photon absorption models in nanostructured semiconductor solar cells and devices: Springer, 2015. (DOI: 10.1007/978-3-319-14538-9

  2. E. Antolín, A. Marti, C. D. Farmer, P. G. Linares, E. Hernandez, A. M. Sanchez, et al., "Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell”, Journal of Applied Physics, vol. 108, p. 064513, 2010. (DOI: 10.1063/1.3468520)

  3. C. Tablero, "Quantum dot energy levels and spectrum for different geometries”, Journal of Applied Physics, vol. 106, pp. 074306-5, 2009. (DOI: 10.1063/1.3243290)

  4. A. Luque, A. Marti, C. Stanley, N. Lopez, L. Cuadra, D. Zhou, et al., "General equivalent circuit for intermediate band devices: Potentials, currents and electroluminescence”, Journal of Applied Physics, vol. 96, pp. 903-909, 2004. (DOI: 10.1063/1.1760836)

 

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