Universidad Politécnica de Madrid

Instituto de energía solar

Infrastructure details


1. Siemens-type lab reactor
  • CVD reactor for polysilicon deposition from Trichlorosilane
  • Deposition at 1 bar in the 1000-1100ºC range
  • Typical growth rate of 2-3 μm/min in 1-10 doped seed rods
  • Deposition in alternative surfaces

2. Pilot plant for silicon purification via chlorosilanes, ∼50 t/a capacity
  • Fluidized Bed Reactor for chlorosilane production from Silicon Tetrachloride
  • Fix Bed Reactor for chlorosilane production from Hydrogen Chloride
  • Distillation columns
  • Siemens CVD reactor for 18 U-rods
  • Clean room for polysilicon post-processing

3. Monocrystalline ingot grower by the Czochralski method
  • PVA TEPLA mod EKZ 2700
  • 80 kg load, up to 6’’ diameter
  • Growth of ingots from unconventional Si feedstock

4. Process and Material Characterization
  • Mass Spectrometer
  • Chromatograph
  • BLS-I /BCT-400 Photoconductance Lifetime Tester for Ingots





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